copyright@ semipower electronic technology co., ltd. all rights reserved. feb. 2014. rev. 1.0 features high ruggedness r ds( on ) (max 107 m ? )@v gs =10v gate charge (typical 21 nc) improved dv/dt capability 100% avalanche tested general description this power mosfet is produced with advanced vdmos technology of samwin . this technology enable power mosfet to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics . this power mosfet is usually used at high efficient dc to dc converter block and switch mode power supply . n - channel d - pak mosfet absolute maximum ratings symbol parameter value unit v dss drain to source voltage 100 v i d continuous drain current (@t c =25 o c) 3* a continuous drain current (@t c =100 o c) 1.9* a i dm drain current pulsed (note 1) 12 a v gs gate to source voltage 16 v e as single pulsed avalanche energy (note 2) 187 mj e ar repetitive avalanche energy (note 1) 40 mj dv/dt peak diode recovery dv/dt (note 3) 5 v/ns p d total power dissipation (@t c =25 o c) 44 w derating factor above 25 o c 0.35 w/ o c t stg , t j operating junction temperature & storage temperature - 55 ~ + 150 o c t l maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds. 300 o c thermal characteristics symbol parameter value unit r thjc thermal resistance, junction to case 2.84 o c/w r thja * thermal resistance, junction to ambient (pcb mount) o c/w r thja thermal resistance, junction to ambient 80.2 o c /w 1/5 *. drain current is limited by junction temperature. bv dss : 100v i d : 3a r ds(on) : 107 m SW3N10 samwin 1 2 3 item sales type marking package packaging 1 sw d 3n10 SW3N10 to - 252 reel order codes 1. gate 2. drain 3. source 1 2 3 to - 252 *. the value varied due to mounted pcb pad areas
copyright@ semipower electronic technology co., ltd. all rights reserved. feb. 2014. rev. 1.0 electrical characteristic ( t c = 25 o c unless otherwise specified ) symbol parameter test conditions min. typ. max. unit off characteristics bv dss drain to source breakdown voltage v gs =0v, i d =250ua 100 v bv dss / t j breakdown voltage temperature coefficient i d =250ua, referenced to 25 o c 0.11 v/ o c i dss drain to source leakage current v ds =100v, v gs =0v 1 ua v ds =80v, t c =125 o c 50 ua i gss gate to source leakage current, forward v gs =16v, v ds =0v 11 u a v gs = - 16v, v ds =0v 11 u a gate to source leakage current, reverse on characteristics v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1.5 2.5 v r ds(on) drain to source on state resistance v gs =10v, i d = 3.5a 85 107 m ? g fs forward transconductance vds = 20 v, id = 1.5a 6 s dynamic characteristics c iss input capacitance v gs =0v, v ds =25v, f=1mhz 1050 pf c oss output capacitance 65 c rss reverse transfer capacitance 40 t d(on) turn on delay time v ds =50v, i d =3a, r g =25? (note 4,5) 8 15 ns tr rising time 20 35 t d(off) turn off delay time 36 50 t f fall time 18 35 q g total gate charge v ds =80v, v gs =10v, i d =3a (note 4,5) 21 40 nc q gs gate - source charge 3 q gd gate - drain charge 5 source to drain diode ratings characteristics symbol parameter test conditions min. typ. max. unit i s continuous source current integral reverse p - n junction diode in the mosfet 3 a i sm pulsed source current 12 a v sd diode forward voltage drop. i s =3a, v gs =0v 1.5 v t rr reverse recovery time i s =3a, v gs =0v, di f / dt =100a/us 28 ns q rr breakdown voltage charge 38 n c . notes 1. repeatitive rating : pulse width limited by junction temperature. 2. l = 41.6mh, i as = 3a, v dd = 50v, r g =25?, starting t j = 25 o c 3. i sd 3a, di/dt = 100a/us, v dd bv dss , staring t j =25 o c 4. pulse test : pulse width 300us, duty cycle 2% 5. essentially independent of operating temperature. SW3N10 samwin 2/5
copyright@ semipower electronic technology co., ltd. all rights reserved. feb. 2014. rev. 1.0 fig. 1. on - state characteristics fig. 2. on - resistance variation vs. drain current and gate voltage fig. 3. gate charge characteristics 3/5 SW3N10 samwin fig. 6. on resistance variation vs. junction temperature fig 5. breakdown voltage variation vs. junction temperature fig. 4. on state current vs. diode forward voltage
copyright@ semipower electronic technology co., ltd. all rights reserved. feb. 2014. rev. 1.0 4/5 SW3N10 samwin fig. 7 . maximum safe operating area fig. 8 . transient thermal response curve v dd dut v ds r l r gs 10v in 10% v ds v in 90% 10% t d(on) t r t on t d(off) t off t f fig. 9 . gate charge test circuit & waveform fig. 10 . switching time test circuit & waveform v ds same type as dut dut v gs 0.5ma q g q gs q gd v gs charge nc 10v
copyright@ semipower electronic technology co., ltd. all rights reserved. feb. 2014. rev. 1.0 fig. 11 . unclamped inductive switching test circuit & waveform 5/5 SW3N10 samwin fig. 12 . peak diode recovery dv/dt test circuit & waveform v dd same type as dut v ds l r g 10v gs i s + - v ds dut *. dv/dt controlled by rg *. is controlled by pulse period v gs (driver) i s (dut) v ds (dut) body diode forward voltage drop v f diode recovery dv/dt i rm di/dt 10v diode reverse current v dd
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